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E. D. Prokhorov

V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Articles:

  • Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths - Vol. 57 '2002 - Telecommunications and Radio Engineering

  • Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes - Vol. 67 '2008 - Telecommunications and Radio Engineering

  • Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone - Vol. 61 '2004 - Telecommunications and Radio Engineering

  • Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity - Vol. 61 '2004 - Telecommunications and Radio Engineering

  • In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode - Vol. 57 '2002 - Telecommunications and Radio Engineering

  • Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes - Vol. 60 '2003 - Telecommunications and Radio Engineering

  • Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions - Vol. 59 '2003 - Telecommunications and Radio Engineering

  • Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode - Vol. 58 '2002 - Telecommunications and Radio Engineering

  • Tunnel n+-D- n+ Cathode for Gunn Diode - Vol. 58 '2002 - Telecommunications and Radio Engineering

  • Two-Level Resonant-Tunneling Diodes with Tunneling Anodes - Vol. 63 '2005 - Telecommunications and Radio Engineering

  • Width of Current-Voltage Characteristics of InxGA1-xN Gunn Diodes - Vol. 65 '2006 - Telecommunications and Radio Engineering

  • Width of Current-Voltage Characteristics of AlxGa1-XN Gunn Diodes - Vol. 66 '2007 - Telecommunications and Radio Engineering



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