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P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
Get more info about author from Directory of Specialists
Articles
A Modified Counter-Sweep Method
Vol. 53 '1999
-
Telecommunications and Radio Engineering
Numerical Analysis of Semiconducting Structures with an Abrupt
p − n
Junction
Vol. 53 '1999
-
Telecommunications and Radio Engineering
Modeling the Internal Amplification of Current Pulses in Reverse-Biased PNIPN Semiconducting Structures
Vol. 55 '2001
-
Telecommunications and Radio Engineering
Electrostatic Fields in Reverse-Biased
pn - i -pn
Structures
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Method of Calculation of Avalanche
p−n
Junction in Self-Excited Mode
Vol. 64 '2005
-
Telecommunications and Radio Engineering
Pulse Photo multiplier Simulation Based on the pn-i-pn Structure with Avalanche p-n Junction Barriers
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Avalanche-Cascade Amplification of Pulses in
pn-i-pn
Structures with Reverse-Biased
p-n
Junctions
Vol. 68 '2009
-
Telecommunications and Radio Engineering
A SOLUTION ALGORITHM FOR THE DRIFT-DIFFUSION MODEL EQUATIONS OF SEMICONDUCTING STRUCTURES WITH AVALANCHE
p - n
JUNCTIONS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
MODEL MICROWAVE MIXERS BASED ON ABRUPT
p−n
JUNCTIONS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
SELF-EXCITED OSCILLATIONS IN ABRUPT
p - n
JUNCTIONS WITH A FIXED REVERSE BIAS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
COHERENT POWER COMBINING IN AVALANCHE-OSCILLATOR DIODES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
FREQUENCY CONVERSION IN
pn-i-pn
STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
POWER CHARACTERISTICS OF MILLIMETRIC AND SUBMILLIMETRIC OSCILLATORS BASED ON THE ABRUPT
p-n
-JUNCTTONS
Vol. 72 '2013
-
Telecommunications and Radio Engineering
POWER CHARACTERISTICS OF MULTIFREQUENCY MILLIMETER AND SUBMILLIMETER WAVE SELF-OSCILLATORS BASED ON THE
pn-i-pn
STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
DOUBLE SPLITTING OF MULTIPLICATION LAYER IN AVALANCHE GENERATOR DIODES AND GENERATION OF TWO-FREQUENCY SELF-EXCITED OSCILLATIONS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
DYNAMICS OF DUAL-FREQUENCY AVALANCHE-GENERATOR DIODES IN MICROWAVE RANGE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
OPERATING MODES OF MICROWAVE AVALANCHE-OSCILLATOR DIODES
Vol. 75 '2016
-
Telecommunications and Radio Engineering
VOLT-AMPERE CHARACTERISTIC AND EXTERNAL INDUCED CURRENT IN AVALANCHE-GENERATOR DIODES WITH REVERSE-BIASED ABRUPT JUNCTIONS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
SYNCHRONOUS GENERATION OF TWO OSCILLATIONS OF MICROWAVE AND TERAHERTZ BANDS IN AVALANCHE-GENERATOR DIODES WITH EXTERNAL SIGNAL
Vol. 76 '2017
-
Telecommunications and Radio Engineering
SCENARIO FOR TRANSITION TO CHAOS THROUGH INTERMITTENCY IN AVALANCHE GENERATOR DIODES WITH AN EXTERNAL SIGNAL
Vol. 77 '2018
-
Telecommunications and Radio Engineering
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