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T. Yoshida

Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1, Bongo, Bunkyo-ku, Tokyo 113-8656, Japan

Articles:

  • SUPER HIGH RATE DEPOSITION OF HOMO- AND HETERO-EPITAXIAL SILICON THICK FILMS BY MESO-PLASMA CVD - Vol. 11 '2007 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)



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