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Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
Get more info about author from Directory of Specialists
Articles
Peculiar Features of Electrical and Photoelectric Properties of Electromagnetic (EM) Radiation Barrier Detectors Based on p-Zn
x
Cd
1−x
Te
Crystals
Vol. 55 '2001
-
Telecommunications and Radio Engineering
Properties of Photoconverters with Active Layer of Cadmium Telluride Containing an lsovalent Impurity of Oxygen
Vol. 55 '2001
-
Telecommunications and Radio Engineering
The Mechanisms Forming Photoelectrical Properties of
p
-GaSe-
n
-InSe Heterojunction
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Electrical Properties of Surface-Barrier Diodes Based on the CdTe Crystals with Modified Surface
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Formation and Properties of n-CdO/p-CdTe Heterojunction
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Electrophysical Properties of Zinc Selenide Diffusion Layers Doped with 3-D Elements from the Vapor Phase
Vol. 68 '2009
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF ZnSe:V CRYSTALS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN
Vol. 71 '2012
-
Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF CdSe HETEROLAYERS WITH ISOVALENT TELLYRIUM IMPURITY
Vol. 72 '2013
-
Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF ZnSe HETEROLAYERS OBTAINED BY IZOVALENT SUBSTITUTION
Vol. 72 '2013
-
Telecommunications and Radio Engineering
THE INFLUENCE OF THE SYNTHESIS CONDITIONS ON LUMINESCENT PROPERTIES OF ZNO HETEROLAYERS
Vol. 72 '2013
-
Telecommunications and Radio Engineering
α-CdTe LAYERS: GROWING AND OPTICAL PROPERTIES
Vol. 73 '2014
-
Telecommunications and Radio Engineering
PECULIARITIES OF THE OPTICAL PROPERTIES OF WIDE-GAP II-VI COMPOUNDS WITH Mg ISOVALENT IMPURITY
Vol. 73 '2014
-
Telecommunications and Radio Engineering
"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
IMPROVEMENT IN OPTICAL BAND GAP DETERMINATION FOR CADMIUM TELLURIDE AND RELATED COMPOUNDS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF Cd
0.55
Mn
0.45
Te FILMS WITH NANO-SCALE SURFACE FORMATIONS
Vol. 76 '2017
-
Telecommunications and Radio Engineering
SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS
Vol. 77 '2018
-
Telecommunications and Radio Engineering
γ-IRRADIATION INFLUENCE ON THE URBACH RULE CRITERIA IN ZnSe<Te> CRYSTALS
Vol. 78 '2019
-
Telecommunications and Radio Engineering
DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP
Vol. 78 '2019
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF CDS HETEROLAYERS RECEIVED BY ISOVALENT SUBSTITUTION ON B-ZNS SUBSTRATES
Vol. 78 '2019
-
Telecommunications and Radio Engineering
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