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V. P. Makhniy

Yu. Fedkovych Chernivtsy National University, 2, Kotsubynsky St., Chernivtsy, 58012, Ukraine

Articles:

  • Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity - Vol. 66 '2007 - Telecommunications and Radio Engineering

  • Electrical Properties of Surface-Barrier Diodes Based on the CdTe Crystals with Modified Surface - Vol. 66 '2007 - Telecommunications and Radio Engineering

  • Formation and Properties of n-CdO/p-CdTe Heterojunction - Vol. 67 '2008 - Telecommunications and Radio Engineering

  • Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity - Vol. 66 '2007 - Telecommunications and Radio Engineering

  • Peculiar Features of Electrical and Photoelectric Properties of Electromagnetic (EM) Radiation Barrier Detectors Based on p-ZnxCd1−xTe Crystals - Vol. 55 '2001 - Telecommunications and Radio Engineering

  • Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method - Vol. 59 '2003 - Telecommunications and Radio Engineering

  • Properties of Photoconverters with Active Layer of Cadmium Telluride Containing an lsovalent Impurity of Oxygen - Vol. 55 '2001 - Telecommunications and Radio Engineering

  • The Mechanisms Forming Photoelectrical Properties of p-GaSe-n-InSe Heterojunction - Vol. 57 '2002 - Telecommunications and Radio Engineering



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