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Dimitrious E. Rapakoulias

Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

In Editorial Board:

  • High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

    • Articles:

  • EFFECT OF INTERELECTRODE SPACE ON PROPERTIES OF SiH4/H2 DEPOSITION DISCHARGES OPERATING AT DIFFERENT RADIO FREQUENCIES - Vol. 4 '2000 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

  • INFLUENCE OF NEGATIVE SUBSTRATE BIAS ON PLASMA PROPERTIES AND SILICON FILM DEPOSITION RATE - Vol. 11 '2007 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

  • TEOS/O2 GAS PRESSURE AS A CHEMICAL COMPOSITION ADJUSTER OF PLASMA DEPOSITED SIO2 THIN FILMS - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)



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