Begell House Authors, Editors and Reviewers

I. P. Storozhenko

V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

Articles

In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode Vol. 57 '2002 - Telecommunications and Radio Engineering
Modelling the Gunn Diodes Based on Variband Semiconductors Vol. 59 '2003 - Telecommunications and Radio Engineering
Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions Vol. 59 '2003 - Telecommunications and Radio Engineering
Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone Vol. 61 '2004 - Telecommunications and Radio Engineering
InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts Vol. 66 '2007 - Telecommunications and Radio Engineering
Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes Vol. 67 '2008 - Telecommunications and Radio Engineering
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport Vol. 67 '2008 - Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode Vol. 68 '2009 - Telecommunications and Radio Engineering
RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS Vol. 70 '2011 - Telecommunications and Radio Engineering
THE FUNCTION OF NEUTRAL‐IMPURITY AND ALLOYED‐POTENTIAL ELECTRON SCATTERING IN EXCITATION OF SPACE‐CHARGE WAVES IN INTERVALLEY ELECTRON‐TRANSFER DEVICES Vol. 70 '2011 - Telecommunications and Radio Engineering
PROSPECTS FOR USING GUNN DIODES BASED ON GaN, AlN AND InN Vol. 71 '2012 - Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES Vol. 72 '2013 - Telecommunications and Radio Engineering
InBN AND GaBN GRADED-GAP GUNN DIODES Vol. 73 '2014 - Telecommunications and Radio Engineering
RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS Vol. 73 '2014 - Telecommunications and Radio Engineering
AlGaInAs GRADED-GAP GUNN DIODE Vol. 75 '2016 - Telecommunications and Radio Engineering
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS Vol. 75 '2016 - Telecommunications and Radio Engineering