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I. P. Storozhenko

V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Articles:

  • Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes - Vol. 67 '2008 - Telecommunications and Radio Engineering

  • Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone - Vol. 61 '2004 - Telecommunications and Radio Engineering

  • In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode - Vol. 57 '2002 - Telecommunications and Radio Engineering

  • Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport - Vol. 67 '2008 - Telecommunications and Radio Engineering

  • InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts - Vol. 66 '2007 - Telecommunications and Radio Engineering

  • Modelling the Gunn Diodes Based on Variband Semiconductors - Vol. 59 '2003 - Telecommunications and Radio Engineering

  • Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions - Vol. 59 '2003 - Telecommunications and Radio Engineering



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