The home for science and engineering™
English
中文
Русский
日本語
Português
Deutsch
Français
Español
Prices and Subscription Policies
About Begell House
Contact Us
Customer Login
0
Shopping Cart
Search box
Search
Home
Books
eBooks
Journals
References and Proceedings
Authors, Editors, Reviewers
A-Z Product Index
Find Journals
Home
Begell House Authors, Editors and Reviewers
Begell House Authors, Editors and Reviewers
Menu
For Authors
For Editors
For Reviewers
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine
Get more info about author from Directory of Specialists
Articles
In
0.4
Ga
0.6
As Gunn Diodes with a
m-n
: InP
1-x
As
x
Cathode
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Modelling the Gunn Diodes Based on Variband Semiconductors
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Operation of Gunn Diode Containing Two InP
0.7
As
0.3
−In
0.4
Ga
0.6
As Active Regions
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of the Gann Diodes Based On A
3
B
5
Threefold Semiconductors with Linearly Changing Composition in the Active Zone
Vol. 61 '2004
-
Telecommunications and Radio Engineering
InP
1-
x
(
z
)
As
x
(
z
)
Variband Gunn Diodes with Different Cathode Contacts
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of GaAs Gunn Diodes with Al
x
Ga
1−
x
As and GaP
x
As
1−
x
Cathodes
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaP
x
(
z
)
As
1−
x
(
z
)
with the Intervalley Electron Transport
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS
Vol. 70 '2011
-
Telecommunications and Radio Engineering
THE FUNCTION OF NEUTRAL‐IMPURITY AND ALLOYED‐POTENTIAL ELECTRON SCATTERING IN EXCITATION OF SPACE‐CHARGE WAVES IN INTERVALLEY ELECTRON‐TRANSFER DEVICES
Vol. 70 '2011
-
Telecommunications and Radio Engineering
PROSPECTS FOR USING GUNN DIODES BASED ON GaN, AlN AND InN
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
InBN AND GaBN GRADED-GAP GUNN DIODES
Vol. 73 '2014
-
Telecommunications and Radio Engineering
RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS
Vol. 73 '2014
-
Telecommunications and Radio Engineering
AlGaInAs GRADED-GAP GUNN DIODE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
Home
Begell Digital Portal
Begell Digital Library
Journals
Books
eBooks
References and Proceedings
Authors, Editors, Reviewers
A-Z Product Index
Find Journals
Prices and Subscription Policies
About Begell House
Contact Us
Language
English
中文
Русский
日本語
Português
Deutsch
Français
Español