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S. Darwiche

Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France

Articles:

EFFECTS OF PLASMA PARAMETERS ON PASSIVATION OF POLYCRYSTALLINE SILICON IN INDUCTIVE LOW PRESSURE HYDROGEN PLASMA - Vol. 11 '2007 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

HYDROGENATION AND PURIFICATION OF SILICON BY RF PLASMA - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL DIAGNOSTICS TO CONTROL ON LINE MELTING OF SILICON MATERIAL TREATED BY THERMAL PLASMA PROCESS. NEW IMPROVEMENTS FACED WITH SEVERE CONDITIONS. - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN Ar+H₂ RF THERMAL PLASMA USED TO THE SILICON POWDER PURIFICATION. EFFECT OF THE EVAPORATION PHENOMENA - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN ARGON-HYDROGEN RF INDUCTIVE THERMAL PLASMA TORCH - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

PASSIVATION OF POLYCRYSTALLINE SILICON BY HYDROGEN PLASMA : CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

SILICON MATERIAL THERMAL TREATMENT PROCESS. EVALUATION OF RESIDENCE TIME - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

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