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M. Benmansour

Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France.

Articles:

HYDROGENATION AND PURIFICATION OF SILICON BY RF PLASMA - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL DIAGNOSTICS TO CONTROL ON LINE MELTING OF SILICON MATERIAL TREATED BY THERMAL PLASMA PROCESS. NEW IMPROVEMENTS FACED WITH SEVERE CONDITIONS. - Vol. 9 '2005 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN Ar+H₂ RF THERMAL PLASMA USED TO THE SILICON POWDER PURIFICATION. EFFECT OF THE EVAPORATION PHENOMENA - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN ARGON-HYDROGEN RF INDUCTIVE THERMAL PLASMA TORCH - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

RF PLASMA PROCESS FOR HIGH PURITY SILICON - Vol. 10 '2006 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

SILICON MATERIAL THERMAL TREATMENT PROCESS. EVALUATION OF RESIDENCE TIME - Vol. 7 '2003 - High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

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