Begell House作者,编辑及审稿者

Victor P. Makhniy

Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine

Articles

Peculiar Features of Electrical and Photoelectric Properties of Electromagnetic (EM) Radiation Barrier Detectors Based on p-ZnxCd1−xTe Crystals Vol. 55 '2001 - Telecommunications and Radio Engineering
Properties of Photoconverters with Active Layer of Cadmium Telluride Containing an lsovalent Impurity of Oxygen Vol. 55 '2001 - Telecommunications and Radio Engineering
The Mechanisms Forming Photoelectrical Properties of p-GaSe-n-InSe Heterojunction Vol. 57 '2002 - Telecommunications and Radio Engineering
Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method Vol. 59 '2003 - Telecommunications and Radio Engineering
Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity Vol. 66 '2007 - Telecommunications and Radio Engineering
Electrical Properties of Surface-Barrier Diodes Based on the CdTe Crystals with Modified Surface Vol. 66 '2007 - Telecommunications and Radio Engineering
Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity Vol. 66 '2007 - Telecommunications and Radio Engineering
Formation and Properties of n-CdO/p-CdTe Heterojunction Vol. 67 '2008 - Telecommunications and Radio Engineering
Electrophysical Properties of Zinc Selenide Diffusion Layers Doped with 3-D Elements from the Vapor Phase Vol. 68 '2009 - Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF ZnSe:V CRYSTALS Vol. 69 '2010 - Telecommunications and Radio Engineering
UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN Vol. 71 '2012 - Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF CdSe HETEROLAYERS WITH ISOVALENT TELLYRIUM IMPURITY Vol. 72 '2013 - Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF ZnSe HETEROLAYERS OBTAINED BY IZOVALENT SUBSTITUTION Vol. 72 '2013 - Telecommunications and Radio Engineering
THE INFLUENCE OF THE SYNTHESIS CONDITIONS ON LUMINESCENT PROPERTIES OF ZNO HETEROLAYERS Vol. 72 '2013 - Telecommunications and Radio Engineering
α-CdTe LAYERS: GROWING AND OPTICAL PROPERTIES Vol. 73 '2014 - Telecommunications and Radio Engineering
PECULIARITIES OF THE OPTICAL PROPERTIES OF WIDE-GAP II-VI COMPOUNDS WITH Mg ISOVALENT IMPURITY Vol. 73 '2014 - Telecommunications and Radio Engineering
"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE Vol. 75 '2016 - Telecommunications and Radio Engineering
IMPROVEMENT IN OPTICAL BAND GAP DETERMINATION FOR CADMIUM TELLURIDE AND RELATED COMPOUNDS Vol. 75 '2016 - Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF Cd0.55Mn0.45Te FILMS WITH NANO-SCALE SURFACE FORMATIONS Vol. 76 '2017 - Telecommunications and Radio Engineering
SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS Vol. 77 '2018 - Telecommunications and Radio Engineering
γ-IRRADIATION INFLUENCE ON THE URBACH RULE CRITERIA IN ZnSe<Te> CRYSTALS Vol. 78 '2019 - Telecommunications and Radio Engineering
DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP Vol. 78 '2019 - Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF CDS HETEROLAYERS RECEIVED BY ISOVALENT SUBSTITUTION ON B-ZNS SUBSTRATES Vol. 78 '2019 - Telecommunications and Radio Engineering