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Progress in Plasma Processing of Materials, 2001

ISBN:
1-56700-165-3 (Print)

MECHANISMS OF MASS TRANSFER DURING ATOMIC OXYGEN RECOMBINATION ON METALLIC SEMICONDUCTORS

C. Guyon
Laboratoire de Génie des Procédés Plasmas et Traitement de Surfaces, Universite Pierre & Marie Curie, 11 rue Pierre et Marie Curie, 75231 Paris Cedex, France

P. Cauquot
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - ENSCP -11, rue Pierre et Marie Curie - 75231 Paris Cedex 05

S. Cavadias
Laboratoire Genie Precedes Plasmas - ENSCP 11, rue Pierre et Marie Curie - 75005 Paris- France

Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Abstract

In order to show a correlation between the electronic properties of the semiconductors (energy gap band.) and their catalycity (activation of oxygen recombination reaction), we have studied the elementary phenomena of heat and mass transfers from a non equilibrium low pressure plasma of oxygen on an oxide semiconductor (n or p-type). In a pulsed radio frequency plasma reactor (13.56 MHz), mass transfer was evaluated by the measurement of recombination coefficient (Gamma) for nand p-type semiconductors having band gap energies varying from 0.3 to 7.3 eVe Results show a lower catalytic activity for n-type semiconductors than for the p-type ones. Moreover a correlation between the band gap energy and the oxide catalycity was observed for the p-type oxides: the activation energy of the recombination reaction depends linearly on the band gap energy.