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Progress in Plasma Processing of Materials, 2001

ISBN:
1-56700-165-3 (Print)

EFFECT OF INTERELECTRODE SPACE ON PROPERTIES OF SiH4/H2 DEPOSITION DISCHARGES OPERATING AT DIFFERENT

E. Amanatides
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece

Dimitris Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece

Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

Abstract

The combined effect of excitation frequency and the variation of the interelectrode space on properties of highly diluted silane in hydrogen discharges used for the deposition of µc-Si:H, is presented. For constant operation voltage, the increase of the electrode gap leads to a continuous increase of the power consumed in the discharge at 30MHz, while at 50MHz changes on the interelectrode space has almost no effect on the total power dissipation. At both frequencies the increase of the interelectrode space leads to an optimum in radical production that as frequency increases is displaced to lower electrode gaps. Film growth rate appears an optimal that coincides to the maximum of radical production at both frequencies, revealing that µc-Si:H deposition rate strongly depends on radicals (SiH2, Si2H4) that undergo rather fast reactions in the gas phase.