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Progress in Plasma Processing of Materials, 1999

ISBN:
1-56700-126-2 (Print)

MOLECULAR DYNAMICS SIMULATION OF INTERDEFFUSION IN METAL/METAL SYSTEMS AT LOW ENERGY DEPOSITION IN VACUUM

O.S. Trushin
Institute of Microelectronics of Russian Academy of Sciences, Universitetskaya 21, 150000 Yaroslavl, Russia

K. Kokko
Department of Physics, University of Turku, FIN-20014 Turku, Finland

P.T. Salo
Department of Physics, University of Turku, FIN-20014 Turku, Finland

Abstract

MD simulations have been performed to investigate the interface mixing in the low energy (5-10 eV) deposition of Ag on Cu(001). The statistics of single Ag atom impacts on the Cu(001) surface was studied. Interface mixing initiated by atom impacts on the substrate was found to increase with growth of atom arrival energy and temperature of substrate. It has been shown that the probability of exchange is increased in the vicinity of bridge position between two binding sites. Normal incidence was shown to yield maximum of intermixing. Finally the formulae for concentration profile of impurity atoms in the film has been derived.