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Progress in Plasma Processing of Materials, 1999

ISBN:
1-56700-126-2 (Print)

PROPERTIES AND CHARACTERISATION OF PHOTOVOLTAIC SILICON LAYERS OBTAINED BY RF THERMAL PLASMA SPRAYING PROCESS

F. Krayem
ENSCP-UPMC Laboratory of plasma processing and surface treatment 11, rue Pierre et Marie Curie 75005 Paris - France

Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Abstract

The deposit of silicon layer by plasma has been characterized by using SEM, EDX analysis, SIMS, XPS in order to explain the composition and the overall properties of the silicon layers for photovoltaic applications. Characterization of silicon deposits has been performed by the hydrogen rate analysis using exodiffusion method. Finally, the on-line diagnostics of the plasma used was: Laser Doppler Anemometry (LDA), Laser Doppler Granulometry (LDG) in order to qualify the process of deposit.