Home Books eBooks Journals References & Proceedings Authors, Editors, Reviewers A-Z Product Index Awards
Transport Phenomena in Thermal Engineering. Volume 2

ISBN:
1-56700-015-0 (Print)

NUMERICAL STUDY ON SILICON CVD IN HORIZONTAL REACTORS

Uichiro Narusawa
Department of Mechanical, Industrial & Manufacturing Engineering, Northeastern University, Boston, MA 02115, USA

Abstract

A numerical study is performed for the Si deposition from silane in a horizontal rectangular reactor. The deposition rate is affected by various hydrodynamic, thermal and concentration parameters. The hydrodynamic effects of flow velocity and duct dimensions on the film growth rate are well-correlated by the use of the inverse Graetz number as the stream-wise non-dimensional lengthscale. The effects of the aspect ratio and the thermal conditions on the profiles of the film growth rate are examined in detail.