Home Books eBooks Journals References & Proceedings Authors, Editors, Reviewers A-Z Product Index Awards
Progress in Plasma Processing of Materials, 2003

ISBN:
978-1-56700-192-1 (Print)
978-1-56700-447-2 (Online)

PLANE PLASMA DISCHARGE APPLICATION FOR TRIODE SPUTTERING

A. AXELEVITCH
Holon Academic Inst, of Technology and the Open University of Israel P.O. Box 305, Holon 58102, Israel

G. GOLAN
Holon Academic Inst, of Technology and the Open University of Israel P.O. Box 305, Holon 58102, Israel

Abstract

A novel sputtering method based on a triode-sputtering set-up is presented. This low vacuum plasma method enables sputtering of thin films at a pressure range of: 0. 2−5 mTorr, using a gas discharge support. The new method is capable of independent control of the sputtering rate vs. sputtering voltage.
Temperature distribution of electrons in the plasma was experimentally studied using the Langmuir probe. Electron temperature was found to be maximal along the plasma plane. Experimental sputtering results of Ti, Si layers, using this method, are described. Obtained sputtering rates for Ti and Si were 60 A°/min and 100 A°/min respectively.