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Progress in Plasma Processing of Materials, 2003

ISBN:
978-1-56700-192-1 (Print)
978-1-56700-447-2 (Online)

MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON

E. Fourmond
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

M. Lemiti
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

C. Trassy
UPR 9033 CNRS - EPM, ENSHMG BP 95 - 38402 Saint-Martin-d'Heres - France

A. Laugier
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

Abstract

Silicon nitride layers (SiNx:H) are widely used in the photovoltaics field as antireflection coating and to passivate multicrystalline silicon solar cells. With this aim, we have developed a plasma-assisted chemical vapour deposition reactor using microwave remote plasma (2.45 GHz). Effect of gas flow rate, microwave power and substrate temperature on the layers is presented. Refractive index varies between 1.7 to 3 in the sample as grown, with a deposition rate up to 40 nm/min. The temperature was observe to have no influence on the deposition rate, and the optical properties of the layers are very stable towards rapid thermal annealing at high temperature (850°C). This is attributed to the low hydrogen content of the layers, as revealed by FTIR analysis.