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Progress in Plasma Processing of Materials, 2003

ISBN:
978-1-56700-192-1 (Print)
978-1-56700-447-2 (Online)

SILICON MATERIAL THERMAL TREATMENT PROCESS. EVALUATION OF RESIDENCE TIME

M. Benmansour
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05

S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France

E. Francke
Laboratoire de Génie Procédés Plasmas et Traitement de Surface, Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France

Sergey V. Dresvin
Laboratory of Electrotechnological and Plasma Installation of Polytechnic Institute -SPb State Polytechnical University, 29 Polytechnicheskaya Str., 195251 Saint-Petersburg, Russia

Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Abstract

The residence time of the particles in reactive thermal plasma governs mechanisms occuring at high temperature, (solid → liquid, liquid → vapor and oxydation Sil + Og→ Si Og ). The goal is to control the process of particles purification with a partial evaporation in order to have a good yield of manufacture of ultra-pure silicon. In this study, it is evaluated from L.D.A. measurements, which provide the particle velocity.
Experimental measurements by optical Emission Spectroscopy (O.E.S.), confirm the gas temperature range surrounding the particle, down stream all along the 30 cm trajectories. The most remarkable result of particle velocity obtained from L.D.A. measurements on one hand, and particle velocity obtained from modeling calculation and ab-initio numerical calculation on the other hand are in a good fitting, which confirm particles residence time τ Part. along 30 cm trajectory.