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E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
Obtenga más información sobre el autor en el Directorio de Especialistas
Articles
Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes
Vol. 52 '1998
-
Telecommunications and Radio Engineering
Effect of the Electrophysical Parameters of Gunn Diodes on the Operation of Frequency Multipliers
Vol. 52 '1998
-
Telecommunications and Radio Engineering
Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths
Vol. 57 '2002
-
Telecommunications and Radio Engineering
In
0.4
Ga
0.6
As Gunn Diodes with a
m-n
: InP
1-x
As
x
Cathode
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Tunnel
n
+
-D- n
+
Cathode for Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Operation of Gunn Diode Containing Two InP
0.7
As
0.3
−In
0.4
Ga
0.6
As Active Regions
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of the Gann Diodes Based On A
3
B
5
Threefold Semiconductors with Linearly Changing Composition in the Active Zone
Vol. 61 '2004
-
Telecommunications and Radio Engineering
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity
Vol. 61 '2004
-
Telecommunications and Radio Engineering
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
Vol. 63 '2005
-
Telecommunications and Radio Engineering
Width of Current-Voltage Characteristics of In
x
GA
1-x
N Gunn Diodes
Vol. 65 '2006
-
Telecommunications and Radio Engineering
Width of Current-Voltage Characteristics of Al
x
Ga
1-
X
N Gunn Diodes
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of GaAs Gunn Diodes with Al
x
Ga
1−
x
As and GaP
x
As
1−
x
Cathodes
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES
Vol. 69 '2010
-
Telecommunications and Radio Engineering
NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE
Vol. 70 '2011
-
Telecommunications and Radio Engineering
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs
Vol. 72 '2013
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY
Vol. 74 '2015
-
Telecommunications and Radio Engineering
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