Auteurs, éditeurs et examinateurs de Begell House

E. D. Prokhorov

V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
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Articles

Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes Vol. 52 '1998 - Telecommunications and Radio Engineering
Effect of the Electrophysical Parameters of Gunn Diodes on the Operation of Frequency Multipliers Vol. 52 '1998 - Telecommunications and Radio Engineering
Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths Vol. 57 '2002 - Telecommunications and Radio Engineering
In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode Vol. 57 '2002 - Telecommunications and Radio Engineering
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode Vol. 58 '2002 - Telecommunications and Radio Engineering
Tunnel n+-D- n+ Cathode for Gunn Diode Vol. 58 '2002 - Telecommunications and Radio Engineering
Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions Vol. 59 '2003 - Telecommunications and Radio Engineering
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes Vol. 60 '2003 - Telecommunications and Radio Engineering
Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone Vol. 61 '2004 - Telecommunications and Radio Engineering
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity Vol. 61 '2004 - Telecommunications and Radio Engineering
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes Vol. 63 '2005 - Telecommunications and Radio Engineering
Width of Current-Voltage Characteristics of InxGA1-xN Gunn Diodes Vol. 65 '2006 - Telecommunications and Radio Engineering
Width of Current-Voltage Characteristics of AlxGa1-XN Gunn Diodes Vol. 66 '2007 - Telecommunications and Radio Engineering
Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes Vol. 67 '2008 - Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode Vol. 68 '2009 - Telecommunications and Radio Engineering
HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES Vol. 69 '2010 - Telecommunications and Radio Engineering
NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE Vol. 70 '2011 - Telecommunications and Radio Engineering
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES Vol. 71 '2012 - Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES Vol. 72 '2013 - Telecommunications and Radio Engineering
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs Vol. 72 '2013 - Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY Vol. 74 '2015 - Telecommunications and Radio Engineering