V. V.
Lysak I. A.
Sukhoivanov ABSTRACT The analysis of optical gain as a function of electron concentration, thickness and material of an active region in quantum-well structures has been carried out. The approximate expression is derived which describes with greater accuracy the amplification at various values of thickness of the active layer. The numerical values of the expression for various binary compounds are obtained. The validity of the calculation data is confirmed through comparison with previously obtained data.
<< Previous article Next article >> |
||||||||||||||||||||||