Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

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2007, Volume66

Issue 19

96 pages

DOI: 10.1615/TelecomRadEng.v66.i19

Issue price - $237.00

I. P. Storozhenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP_1-x(z)As_x(z) variband semiconductor compounds with n⁺-n and n⁺-n⁻-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP_1-x(z)As_x(z) diodes excel the diodes based on the InP_1-xAs_x spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range.

DOI: 10.1615/TelecomRadEng.v66.i19.70 Download article, 1775-1790 pages

Article price - $40.00

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