Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2007, Volume66

Issue 19

96 pages

DOI: 10.1615/TelecomRadEng.v66.i19

Issue price - $237.00

V. P. Makhniy
Yu. Fedkovych Chernivtsy National University, 2, Kotsubynsky St., Chernivtsy, 58012, Ukraine

V. V. Mel'nyk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi, Ukraine

N. V. Skrypnyk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi, Ukraine

V. V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

It was shown that the annealing of n−CdTe substrates in the water suspension of alkaline metals leads to the significant increase of potential barrier height and open-circuit voltage for the surface-barrier Au-CdTe diodes created on their base. The main electric current transport mechanism responsible for the positive-biased branch of current-voltage curve is carrier recombination in the space-charge region involving deep levels.

DOI: 10.1615/TelecomRadEng.v66.i19.60 Download article, 1769-1774 pages

Article price - $35.00

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