Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2003, Volume60

Issue 5&6

161 pages

DOI: 10.1615/TelecomRadEng.v60.i56

Issue price - $394.00

O. V. Botsula
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

The operation of AlAs/GaAs two-level resonant tunneling and GaAs Gunn diodes which are series-connected in a resonance circuit, has been considered. The current-voltage characteristics of this kind of a diode combination have the following particularities: current jumping, regions being inaccessible for measurements in the current-voltage characteristics, shifts of current maxima to the region of larger voltages. On the current-voltage characteristics there are three regions with negative differential conductivity which can be used for generating in the millimeter wave band. The ratios of the parameters of the Gunn and resonant tunneling diodes join-operated, which provide the formation of three generation zones (two zones exist at the expense of resonant tunneling and one of them forms owning to electron intervalley transfer), have been determined. In these areas the generation efficiency has been estimated at the millimeter wave band.

DOI: 10.1615/TelecomRadEng.v60.i56.170 Download article, 8 pages

Article price - $35.00

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