Shopping cart ITEMS
 modern scholarly publishers in the finest tradition
Login Register
Home
Books
Journals
References
A-Z Index
Author Index
For Our Authors
User Area
Shopping Cart
Contact
Electronic Data Center

Telecommunications and Radio Engineering

 

ISSN for PRINT: 0040-2508

Institutional price:

$4518.00

Issues per year:

20

For Online Access

Best Paper Award Selection - Editorial Board Site

Add subscription to shopping cart

2005, Volume63

Issue 7-12

  98 pages  

DOI: 10.1615/TelecomRadEng.v63.i7   

click 'Save as...' here to save XML metadata

Issue price - $1182.00  

Add to shopping cart

  • Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
  • O. V. Botsula
    V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

    E. D. Prokhorov
    V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine


    ABSTRACT

    A resonant-tunnelling diode with a two-level quantum well and an anode in the form of a tunnelling diode connected in the direct direction has been investigated. In this condition, the voltage-current characteristics of the diode have three region of negative differential conductivity. The generation efficiency and the frequency wave band, which is up to 1000 GHz for the parameters given in the article, have been defined for these regions.

    DOI: 10.1615/TelecomRadEng.v63.i10.60

    Download article, 903-912 pages

    Article price - $35.00  

    Add to shopping cart

    << Previous article   Next article >>

    Designed by offsiteteam Designed by offsiteteam Designed by offsiteteam
    Begell House Inc.
    50 Cross Highway,
    Redding, CT 06896
    TEL (203) 938 1300
    FAX (203) 938 1304
    orders@begellhouse.com