Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

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2001, Volume55

Issue 3

102 pages

Issue price - $197.00

N. T. Cherpak
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

A. I. Gubin
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

A. A. Lavrinovich
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

Microwave reflectivity properties of HTS film - dielectric substrate structure in the framework of «optical» terminology for millimeter waveband have been studied by means of computer modeling. For this purpose the enhanced two-fluid model of HTS microwave properties is applied. Some peculiar features in the reflection coefficient of the p-polarized waves obliquely incident on the sample are observed, and difference between the values of the reflectivity in S- and N-states is calculated. For thin HTS films (thickness < λ_L) the non-monotonic dependences of the reflectivity versus both temperature and the incidence angle (in N-state) are observed. For thick films (thickness > λ_L) the difference enhancement factor can be as much as 25 at the incidence angle of 88°. To perform the simulation, the material parameters of YBa₂Cu₃O_7−δ superconductor and LaAlO₃ substrate in the frequency range of 40-160 GHz have been used.

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