Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

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Best Paper Award Selection - Editorial Board Site

2002, Volume58

Issue 7&8

157 pages

Issue price - $394.00

O. V. Botsula
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

The operation of n+-D- n+ Gunn diode with a dielectric based on wide-gap Al_0.2Ga_0.8As semiconductor was examined. The model is suggested allowing the diode oscillation mode to be analyzed. The peculiarities of electron transfer and current instability are scrutinized. The energy characteristics of diode operation in the centimeter range are estimated. The perspectives of diode use are outlined.

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