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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2007, Volume66

94 pages

DOI: 10.1615/TelecomRadEng.v66.i13

Issue price - $237.00

Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity

L. I. Arkhilyuk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

V. P. Makhniy
Yu. Fedkovych Chernivtsy National University, 2, Kotsubynsky St., Chernivtsy, 58012, Ukraine

M. M. Sletov
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

V. V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

I. V. Tkachenko
Chernivtsi Institute of Trade and Economics, 7 Tsentralna Ploshcha, 58002 Chernivtsi, Ukraine

ABSTRACT

Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 10¹⁹cm⁻³ at T=1150K was calculated in the framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, as experimentally observed for ZnSe:O samples.