Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2007, Volume66

Issue 13

94 pages

DOI: 10.1615/TelecomRadEng.v66.i13

Issue price - $237.00

D. V. Pavlenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

The impact ionization in GaN, AlN and their compounds are under consideration. The width of current-voltage characteristics and the voltages enough for the impact ionization be developed in Gunn diodes made of GaN, AlN and their compounds are defined.

DOI: 10.1615/TelecomRadEng.v66.i13.60 Download article, 1197-1204 pages

Article price - $35.00

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