Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2003, Volume59

Issue 10-12

197 pages

DOI: 10.1615/TelecomRadEng.v59.i1012

Issue price - $591.00

S. A. Zuev
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

V. Yu. Tereshchenko
Tavricheskii National University, 4, Vernadskogo Ave., Simferopol, 95007, Ukraine

V. V. Starostenko
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

A. A. Shadrin
Tavricheskii National University, 4, Vernadskogo Ave., Simferopol, 95007, Ukraine

The given work presents the calculated results of drift characteristics of GaAs and Si-based semiconductor structures. The results are obtained in the processes of heating a crystal by the current of free-charge carriers. It is shown that under the high current conditions the drifting velocity growth depends on heating of a semiconductor structure.

DOI: 10.1615/TelecomRadEng.v59.i1012.170 Download article, 5 pages

Article price - $35.00

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