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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2001, Volume55

101 pages

Issue price - $197.00

Modeling the Internal Amplification of Current Pulses in Reverse-Biased PNIPN Semiconducting Structures

K. A. Lukin
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

P. P. Maksymov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

A. A. Colavita
International Center for Theoretical Physics Trieste, Italy

H. A. Cerdeira
Abdus Salam International Centre of Theoretical Physics, 34100 Trieste, Italy

ABSTRACT

The modified counter-sweep method has been used to solve the finite-difference equations of the drift-diffusion model of reverse-biased pnipn structures with abrupt p-n junctions. Calculated results are presented concerning the electric field in the pnipn structure and the currents through its i domain. As has been shown, with some values of the physical parameters the reverse-biased pnipn structure is characterized by a sufficient amount of positive feedback on the drift current to condition a nonlinear state of self-induced current oscillations. Owing to this effect, the reverse-biased pnipn structures seem to be prospective for the design of various semiconducting devices, like, e.g. avalanche photo-multipliers, high-frequency thyristors or chaotic oscillation generators.