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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2004, Volume61

551 pages

DOI: 10.1615/TelecomRadEng.v61.i7

Issue price - $1182.00

Energy and Frequency Characteristics of the Gann Diodes Based On A₃B₅ Threefold Semiconductors with Linearly Changing Composition in the Active Zone

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

I. P. Storozhenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

ABSTRACT

Gunn diodes based on the different variband semiconductor alloys (In_x(z)Ga_1−x(z)As, Al_x(z)Ga_1−x(z)As, InP_1−x(z)As_x(z)) compositions of which depend linearly on the coordinate in the active zone have been studied in a wide frequency range with the help of a two-temperature model of intervalley electron transfer in a variband semiconductor. Critical generation frequencies, energy and frequency characteristics have been determined. The list of A₃B₅ threefold semiconductor alloys, which are promising for the use in the Gunn diodes, have been suggested.