Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2006, Volume65

N. A. Shekhovtsov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

The paper considers processes occurring in the space-charge (SC) region of antibarrier metal-semiconductor (m-n) contacts, that confine the injection current, as well as impede vanishing of contact potential difference U_k due to the direct voltage. The current buildup through the m-n contact after decreasing U_k to the minimum has been investigated.

DOI: 10.1615/TelecomRadEng.v65.i16.40 Download article, 1489-1500 pages

Article price - $35.00

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