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DOI: 10.1615/TelecomRadEng.v65.i16
Pages: 474
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DOI: 10.1615/TelecomRadEng.v65.i16.40
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Article price - $35.00 |
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Injection Regime of Antibarrier Metal-Semiconductor (m-n) Contact
N. A. Shekhovtsov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
ABSTRACT
The paper considers processes occurring in the space-charge (SC) region of antibarrier metal-semiconductor (m-n) contacts, that confine the injection current, as well as impede vanishing of contact potential difference Uk due to the direct voltage. The current buildup through the m-n contact after decreasing Uk to the minimum has been investigated.
pages 1489-1500
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