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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2008, Volume67

93 pages

DOI: 10.1615/TelecomRadEng.v67.i7

Issue price - $271.00

Numerical Simulation of Avalanche Breakdown in the GaAs MESFET

L. N. Akhramovich
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

S. A. Zuev
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

V. V. Starostenko
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

V. Yu. Tereshchenko
Tavricheskii National University, 4, Vernadskogo Ave., Simferopol, 95007, Ukraine

G. I. Churyumov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166; Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

D. A. Unzhakov
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

Ye. V. Grigor'ev
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine

ABSTRACT

Paper is devoted to the numerical simulation of the occurence and growth processes of an avalanche breakdown in the GaAs MESFET in accordance with the electrical regimes and the active-region geometry.