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Telecommunications and Radio Engineering

 

ISSN for PRINT: 0040-2508

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$4518.00

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2003, Volume59

Issue 1&2

  161 pages  

DOI: 10.1615/TelecomRadEng.v59.i12   

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  • Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions
  • Yu. V. Arkusha
    V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

    E. D. Prokhorov
    V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

    I. P. Storozhenko
    V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine


    ABSTRACT

    The operation of Gunn diode with series concatenated InP0.7As0.3 and In0.4Ga0.6As active regions was analyzed in terms of the two-temperature intervalley electron transfer model. The energy and frequency characteristics of the diodes differing in the type of cathode metallic contact were obtained (barrier height is 0.04 eV). The output characteristics of the diode with two active regions and a blocking metallic cathode were found to result from the complex interplay between the physical processes occurring simultaneously in the two regions. The highest output power flux was estimated to be ~40 kW/cm2 at a frequency of 42 GHz and a generation efficiency ~20%. The diode with an antiblocking metallic cathode contact operates as a heterocathode diode, i.e. a generation of current oscillations is provided exclusively by the In0.4Ga0.6As active region.

    DOI: 10.1615/TelecomRadEng.v59.i12.90

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