Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

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2003, Volume59

Issue 1&2

161 pages

DOI: 10.1615/TelecomRadEng.v59.i12

Issue price - $394.00

I. P. Storozhenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

A two-temperature model of intervalley electron transfer in the variband semiconductor is developed. This model was applied to examine the operation of the Gunn diodes based on the variband In_x(z)Ga_1-x(z)As. In the active diode region the semiconductor composition x(z) is linearly coordinate-dependent. It is shown that operation of the diode with a variband active region is determined by the coordinate dependency of relaxation frequency of electron concentration in the Γ-valley of In_x(z)Ga_1-x(z)As. If this frequency is a decreasing function of coordinate (in the In_x(z)Ga_1-x(z)As this occurs when x(z) increases) the dipole domains propagate in the diode, while the opposite case is featured by the propagation of charged layers. The maximum output power flux ~6.5 kW/cm² was obtained for the GaAs-In_0.4Ga_0.6As - diode at a frequency of 37 GHz with a 12% efficiency.

DOI: 10.1615/TelecomRadEng.v59.i12.100 Download article, 11 pages

Article price - $35.00

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