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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2008, Volume67

96 pages

DOI: 10.1615/TelecomRadEng.v67.i3

Issue price - $271.00

Influence of Constructive and Technological Solutions of Silicon Solar Cells on Minority Carrier Parameters of Base Crystals

M. V. Kirichenko
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv, Ukraine

R. V. Zaitsev
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv, Ukraine

N. V. Deyneko
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv, Ukraine

V. R. Kopach
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv, Ukraine

V. A. Antonova
State-owned Enterprise "Research Technological Institute for Equipment Development", 40/42, Primakov St., 61010 Kharkiv, Ukraine

A. M. Listratenko
State-owned Enterprise "Research Technological Institute for Equipment Development", 40/42, Primakov St., 61010 Kharkiv, Ukraine

ABSTRACT

The investigated values of lifetime τ and diffusion length L of minority carriers in base crystals of silicon solar cells (Si-SC) associated with their various structurally solutions are presented. The optimal construction-technological solution version for Ukrainian monocrystalline Si-SC was suggested on the basis of the carried out comparative analysis of received τ and L values.