Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

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2002, Volume57

Issue 1

100 pages

Issue price - $197.00

O. V. Botsula
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

V. V. Medvedev
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Discussed in the paper is frequency multiplication in resonance-tunnel diodes with a variety of current-voltage characteristics. Single-level resonance-tunneling diodes like Al_0.2 Ga_0.8As/GaAs, In_0.53Ga_0.47As / AlAs, InAs / AlAs / GaSb and the two-level AlAs / GaAs are considered. As has been found, the highest frequency conversion factors at all harmonics are shown by the two-level resonance-tunneling diode, with or without bias voltage, compared with the single level resonance-tunneling diodes. The high frequency conversion factor for the harmonic components enables obtaining power levels at the harmonics comparable to those of Gunn generators and avalanche-transit time diodes at millimeter wavelengths.

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