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Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

Institutional price:	$4518.00
Issues per year:	20

Best Paper Award Selection - Editorial Board Site

2008, Volume67

94 pages

DOI: 10.1615/TelecomRadEng.v67.i10

Issue price - $271.00

Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaP_x(z)As_1−x(z) with the Intervalley Electron Transport

I. P. Storozhenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

ABSTRACT

Features of initiation and drift of the space charge waves in the Gunn-effect diode based on variband GaP_x(z)As_1−x(z) with a n⁺−n cathode has been studied. It is shown that there are phenomena in the variband Gunn diodes, which do not exist in the diodes based on spatially homogeneous semiconductors. A₃B₅ variband threefold semiconductors are generalized.