Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

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2005, Volume64

Issue 7-12

563 pages

DOI: 10.1615/TelecomRadEng.v64.i7

Issue price - $1182.00

K. A. Lukin
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

P. P. Maksymov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine

The method of finite differences for calculation of avalanche p−n junctions in self-excited oscillation mode is proposed. It is demonstrated that the solution for nonlinear equations set of drift-diffusion model of p−n junctions found with the help of this method is satisfying the boundary conditions at mobile boundaries of the depletion region and the continuity conditions at the boundary of separation of p− and n− regions. The results of calculation of density of charges, electrical field and electrical potential of GaAs avalanche p−n junctions are given.

DOI: 10.1615/TelecomRadEng.v64.i8.40 Download article, 625-638 pages

Article price - $35.00

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