Telecommunications and Radio Engineering

ISSN for PRINT: 0040-2508

For Online Access

Best Paper Award Selection - Editorial Board Site

2008, Volume67

Issue 8

95 pages

DOI: 10.1615/TelecomRadEng.v67.i8

Issue price - $271.00

I. P. Storozhenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

E. D. Prokhorov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

Operation of the GaAs Gunn diodes with Al_xGa_1−xAs and cathodes is studied with the two-level model of the intervalley electron transport in the semiconductors. The key features and regularities of operation of the intervalley-electron-transport devices in which an isotype forward-biased heterojunction is a cathode are defined. Energy and frequency characteristics are obtained. Limit of the operation frequencies are determined.

DOI: 10.1615/TelecomRadEng.v67.i8.70 Download article, 739-749 pages

Article price - $35.00

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