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Heat Transfer Research

ISSN for PRINT: 1064-2285

Institutional price:	$2485.00
Issues per year:	8

Best Paper Award Selection - Editorial Board Site

2007, Volume38

96 pages

DOI: 10.1615/HeatTransRes.v38.i1

Issue price - $363.00

Numerical Modeling of Heat and Mass Transfer Processes in PECVD Reactors for Growing Silicon Films under the Conditions of Intense Formation of Higher Silanes in the Gas Phase

Yuriy E. Gorbachev
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation

M. A. Zatevakhin
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation

A. A. Ignatiev
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation

Valeria V. Krzhizhanovskaya
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation

ABSTRACT

A model of the process of growth of an amorphous silicon film from HF discharge silane plasma in plasma-chemical reactors has been developed. The model takes into account homogeneous chemical reactions, deposition of radicals on the walls, diffusion, convection, and formation of higher silanes. A parallel algorithm for computations on multi-processor systems has been built. A software complex has been created for 3Dcomputations. Processes affecting the film growth have been investigated.