C. Y.
Soong R. Y.
Tzong ABSTRACT The present work is concerned with the numerical visualization of flow patterns, temperature fields, and concentration contours in a low-pressure metal organic chemical vapor deposition (MOCVD) reactor with a rotating susceptor. For simulation of the variable-property gas flow, the dilute mixture approach is invoked, and the compression work and thermal diffusion effects are also included. By considering gas inlet pressures of 0.2, 0.1, and 0.05 atm at various rotating rates, the influences of the operating pressure on the flow fields and the epitaxial growth rate are examined. The central theme of the present work lies in visualizing the details of the flow fields at various operating conditions in order to diagnose the flow quality and attain profound physical insights into the mechanisms of macrotransport phenomena of large-area epitaxy in low-pressure MOCVD reactors.
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