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High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

An International Journal

ISSN for PRINT: 1093-3611

Institutional price:	$604.00
Issues per year:	4

Best Paper Award Selection - Editorial Board Site

2006, Volume10

154 pages

DOI: 10.1615/HighTempMatProc.v10.i4

Issue price - $155.00

LIBS ANALYSIS OF PHOTOVOLTAIC MATERIAL INCLUDING WAFER AND RAW MATERIAL

A. Soric
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

Daniel Morvan
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

Jacques Amouroux
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

N. Leone
Section détection physique, Centre d'Etudes du Bouchet, Delegation Generate pour l'Armement, BP 3, 91710 Vert le Petit, France

P. Adam
Section détection physique, Centre d’Etudes du Bouchet, Direction des Centres d'Expertise et d'Essais, Delegation Generate pour l’Armement, BP 3, 91710 Vert le Petit, France

ABSTRACT

Laser Induced Breakdown Spectroscopy is a new analytical method permitting in less than 10.10⁻⁶ second to qualify by atomic emission spectroscopy the composition of every kind of material without any sampling. The high sensibility of the technique (10⁻⁷g/g) gives the possibility to qualify the purity of the material, its defects or any kind of pollutant from the crucible or impurity from the raw material. We have developed this technique for three kinds of silicon materials; firstly metallurgical grade silicon, the raw material, secondly this previous silicon after its purification by an RF plasma process, at last the photovoltaic grade silicon to evaluate the efficiency of the plasma process purification. First analysis of photovoltaic and metallurgical grade silicon (raw material) gives references of two degrees of silicon purity. After the plasma treatment we analyze the surface and the bulk of the treated sample to understand diffusion mechanisms of impurities in the liquid material during the plasma treatment.