High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) An International Journal

ISSN for PRINT: 1093-3611

For Online Access

Best Paper Award Selection - Editorial Board Site

2000, Volume4

Issue 3

152 pages

Issue price - $144.00

P. Cauquot
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - ENSCP -11, rue Pierre et Marie Curie - 75231 Paris Cedex 05

S. Cavadias
Laboratoire de Génie des Procédés Plasmas et Traitement de Surfaces, 11 rue Pierre et Marie Curie, 75231 Paris Cedex, France

Jacques Amouroux
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

In order to quantify the energy transfer from the reactive flow to a surface, determination of recombination and accommodation coefficients (respectively γ and β coefficients) is required. The following work concerns atomic oxygen flow recombining on silicon carbide. The γ coefficient is measured in a pulsed oxygen plasma reactor in non equilibrium conditions, using an actinometiic method, whereas the β coefficient is determined in a micro-wave plasma reactor, using a calorimetric method. The βγ coefficient gives also the energetic transfer to the surface during the recombination reaction. The experimental study is undertaken on silicon carbide which presents interesting properties as refractory material. The measurements are performed on a large temperature range (300 - 1123 K) in order to point out a change in the recombination mechanism when the surface temperature rises. At the same time, the chemical structure of the material is followed by different analysis techniques (ESCA, SIMS and SEM) and shows a modification of the chemical composition of silicon carbide resulting from oxidation, ablation of the surface and diffusion of oxygen into the bulk material.

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