High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) An International Journal

ISSN for PRINT: 1093-3611

For Online Access

Best Paper Award Selection - Editorial Board Site

2005, Volume9

Issue 2

155 pages

DOI: 10.1615/HighTempMatProc.v9.i2

Issue price - $144.00

S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France

M. Nikravech
Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces, Universite P. et M. Curie, Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75005 Paris, France

Daniel Morvan
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

Jacques Amouroux
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

D. Ballutaud
Laboratoire de Physique des Solides et de Cristallogenese, CNRS, 1 place Aristide Briand, F-92195 Meudon CEDEX, France

Hydrogenation of silicon materials has attracted a great advantage for its photovoltaic properties. In this paper, we investigated the effects of hydrogen plasma treatment on the structure and properties of silicon surface. The electrical conductivity is measured before and after plasma exposure by impedance spectroscopy on solid indicating a promising method. We observed a strong dependence between measurements and operational conditions (temperature, atmosphere, ...). SIMS, and deuterium effusion are used in order to confirm the impedance measurements. The surface roughness is also evaluated by AFM.

DOI: 10.1615/HighTempMatProc.v9.i2.90 Download article, 269-277 pages

Article price - $35.00

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