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High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

An International Journal 

ISSN for PRINT: 1093-3611

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$604.00

Issues per year:

4

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2005, Volume9

Issue 2

  155 pages  

DOI: 10.1615/HighTempMatProc.v9.i2   

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  • SYNTHESIS AND PROPERTIES OF FULLERENE CONTAINED FILMS IN RF PLASMA
  • V. V. Azharonok
    Institute of Molecular and Atomic Physics of the National Academy of Sciences of Belarus, F.Skaryna Av., 70, Minsk, 220072, Belarus

    L. I. Filatova
    Institute of Molecular and Atomic Physics of the National Academy of Sciences of Belarus, F.Skaryna Av., 70, Minsk, 220072, Belarus

    V. D. Shimanovich
    Institute of Molecular and Atomic Physics of NAS of Belarus, 70 Skaryna Av., 220072 Minsk, Belarus


    ABSTRACT

    The process of deposition of semitransparent fullerene contained composite films in a capacitively coupled rf discharge is investigated. The 5.28 MHz discharge is operated in a parallel plate reactor. As a working gas helium is used at pressure 0.5 ÷ 5 Torr. Carbon films are deposited on a quartz plate. Products of electric arc synthesis of fullerenes (a small-dispersed carbon soot containing fullerene C60 and C70) are used as an initial substance for making carbon films. The processes in the discharge are studied by emission spectroscopy methods. The gas kinetic temperature is measured in different zones of the discharge gap near the quartz substrate. Optical absorption properties and structure of obtained films are investigated using UV-VIS spectrophotometer and scanning electron microscope.

    DOI: 10.1615/HighTempMatProc.v9.i2.80

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