High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) An International Journal

ISSN for PRINT: 1093-3611

For Online Access

Best Paper Award Selection - Editorial Board Site

2003, Volume7

Issue 2

158 pages

DOI: 10.1615/HighTempMatProc.v7.i2

Issue price - $144.00

E. Fourmond
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

M. Lemiti
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

C. Trassy
EPM-Madylam, ENSHMG, BP 95, F-38402 Saint Martin d'Heres, France

A. Laugier
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

Silicon nitride layers (SiN_x:H) are widely used in the photovoltaics field as antireflection coating and to passivate multicrystalline silicon solar cells. With this aim, we have developed a plasma-assisted chemical vapour deposition reactor using microwave remote plasma (2.45 GHz). Effect of gas flow rate, microwave power and substrate temperature on the layers is presented. Refractive index varies between 1.7 to 3 in the sample as grown, with a deposition rate up to 40 nm/min. The temperature was observe to have no influence on the deposition rate, and the optical properties of the layers are very stable towards rapid thermal annealing at high temperature (850°C). This is attributed to the low hydrogen content of the layers, as revealed by FTIR analysis.

DOI: 10.1615/HighTempMatProc.v7.i2.130 Download article, 10 pages

Article price - $35.00

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