High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) An International Journal

ISSN for PRINT: 1093-3611

For Online Access

Best Paper Award Selection - Editorial Board Site

2000, Volume4

Issue 4

132 pages

Issue price - $144.00

E. Amanatides
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece

D. Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece

Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

The combined effect of excitation frequency and the variation of the interelectrode space on properties of highly diluted silane in hydrogen discharges used for the deposition of μc-Si:H, is presented. For constant operation voltage, the increase of the electrode gap leads to a continuous increase of the power consumed in the discharge at 30MHz, while at 50MHz changes on the interelectrode space has almost no effect on the total power dissipation. At both frequencies the increase of the interelectrode space leads to an optimum in radical production that as frequency increases is displaced to lower electrode gaps. Film growth rate appears an optimal that coincides to the maximum of radical production at both frequencies, revealing that μc-Si:H deposition rate strongly depends on radicals (SiH₂, Si₂H₄) that undergo rather fast reactions in the gas phase.

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