High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) An International Journal

ISSN for PRINT: 1093-3611

For Online Access

Best Paper Award Selection - Editorial Board Site

2002, Volume6

Issue 1

130 pages

Issue price - $144.00

Krzysztof Schmidt-Szalowski
Warsaw University of Technology, Faculty of Chemistry, ul. Noakowskiego 3, 00-662 Warszawa, Poland

Z. Rzanek-Boroch
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

J. Sentek
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

Z. Rymuza
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

Z. Kusznierewicz
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

M. Misiak
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

A new PE-CVD process for the thin coating manufacturing, using electric discharges at atmospheric pressure stabilized with a dielectric barrier (DBD), has been developed on a laboratory scale. Studying the polycondensation of hexamethyldisilazane (HMDSN) and tetraethoxysilicon (TEOS) uniform films, of a thickness of 10 - 200 nm, were obtained with silicon oxynitride or dioxide as the main components and with residues of organic components. The films were stable, smooth and strong adhering to the substrate. Their composition under various experimental conditions was determined by means of FT-IR and XPS spectroscopy, and their mechanical properties were studied. Laboratory models of reactors for thin films deposition under DBD conditions at atmospheric pressure were described.

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