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High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

An International Journal

ISSN for PRINT: 1093-3611

Institutional price:	$604.00
Issues per year:	4

Best Paper Award Selection - Editorial Board Site

2007, Volume11

161 pages

DOI: 10.1615/HighTempMatProc.v11.i4

Issue price - $168.00

COMPREHENSIVE MODIFICATION OF SEMICONDUCTORS AND METALS PROVIDING NEW STRUCTURAL FEATURES OF SURFACE LAYERS SUBJECTED TO COMPRESSION PLASMA FLOWS

V. M. Astashinski
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70 Nezavisimosti ave., 220072 Minsk, Belarus

S. I. Ananin
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, Nezalezhnastsi ave., Minsk, 220072 Belarus

E. A. Kostyukevich
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, Nezalezhnastsi ave., Minsk, 220072 Belarus

A. M. Kuzmitski
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70 Nezavisimosti ave., 220072 Minsk, Belarus

V. V. Uglov
Dpt. of Solid State Physics - Belarusian State University, 4, F.Nezavisimosti ave., 220030 Minsk, Belarus

V. M. Anishchik
Dpt. of Solid State Physics - Belarusian State University, 4, F.Nezavisimosti ave., 220030 Minsk, Belarus

N. N. Cherenda
Belarusian State University, 4, F.Nezavisimosti ave., 220030 Minsk, Belarus

A. K. Stalmashonak
Belarusian State University, 4, F.Nezavisimosti ave., 220030 Minsk, Belarus

Yu. V. Sveshnikov
Belarusian State University, 4, F. Nezalezhnastsi ave., Minsk, 220080 Belarus

N. T. Kvasov
Belarusian State University of Informatics and Radioelectronics, 6, P. Brovka Street, 220027 Minsk, Belarus

A. L. Danilyuk
Belarusian State University of Informatics and Radioelectronics, 6, P. Brovka Street, 220027 Minsk, Belarus

A. V. Punko
Belarusian State University of Informatics and Radioelectronics, 6, P. Brovki Str., Minsk, 220027 Belarus

ABSTRACT

The priority results obtained with the use of compression plasma flows for substantial structural-phase modification of semiconductor and metal surfaces are presented. In particular, the formation of bulk (cylinder-like) regular submicron/ nanoscale structures on the silicon wafers, deposition of nanostructured metal coatings completely covering a surface including bulk structures, plasma-assisted mixing in the systems "coating-substrate" from various materials, and a deep doping of modified layer by atoms of the plasma-forming gas are reported.